The hottest research on doping nitride semiconduct

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Significant progress has been made in the doping research of nitride semiconductors

the Physical Review Letters (PRL) Journal of the American Physical Society published the latest research results of the wide band gap semiconductor research center of the school of physics of Peking University and the innovative group of "new semiconductor low dimensional quantum structures and devices" on October 5, 2018 "Unambiguous identification of carbon loca therefore on the N site in semi insulating Gan for quite a long time in the future"

iii nitride (also known as GaN based) wide band gap semiconductors have a series of excellent physical and chemical properties with different configurations. They are irreplaceable new semiconductor materials for the development of semiconductor lighting, a new generation of mobile communication, a new generation of general power supply, new energy vehicles, solid-state UV light sources and so on. Doping regulation is a key scientific and technical problem in the development of nitride semiconductor materials and devices. Obtaining semi insulating GaN by C doping is the mainstream method of developing GaN based electronic devices at present. However, as a group IV element, C impurity has amphoteric characteristics in Gan, which can replace either N atom or GA atom, or form a complex with other impurities and defects, which makes the doping mechanism of C in Gan very complex, and has become one of the focus issues in the field of nitride semiconductor electronic materials and devices in recent years. Determining the lattice position of C impurity in Gan is very important to solve the above problems

led by Professor Shen Bo, the wide band gap semiconductor research team of Peking University and its collaborators have recently made important progress on this issue. The team, together with the Suzhou Institute of nanotechnology of the Chinese Academy of Sciences and the University of science and technology of China and other cooperative units, used infrared spectroscopy and Raman spectroscopy to overcome the measurement problems caused by the strong residual ray band related reflection region in GaN. In the experiment, two local vibration modes related to C in semi insulating Gan were observed, and combined with the first principle calculation, the direct evidence of C impurity replacing n in Gan in some cases was given, This long-standing controversial issue has been resolved. The results also have important reference value for understanding and understanding the doping behavior of C impurity in AlN, BN, ZnO and other hexagonal symmetrical compound semiconductor materials

Wushan, a doctoral student of Peking University, is the first author of the paper, and Yang Xuelin and Shen Bo are the co correspondents of the paper. The partners include Shi Lin and Xu Ke from Suzhou Institute of nanotechnology, Chinese Academy of Sciences, Zhang Qing from Beijing University of technology, Qi Zeming from University of science and technology of China, and several teachers and classmates from Peking University wide band gap semiconductor research center. This work has been supported by national key research and development plan, National Natural Science Foundation of China, 2011 Collaborative Innovation Center, State Key Laboratory of Artificial Microstructure and mesoscopic physics and other projects

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